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C4704

Hitachi Semiconductor
Part Number C4704
Manufacturer Hitachi Semiconductor
Description Silicon NPN Epitaxial
Published Jul 4, 2015
Detailed Description 2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature • Excellent high frequency characteristics fT = 300 MHz ...
Datasheet PDF File C4704 PDF File

C4704
C4704

Overview
2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.
0 pF typ • Suitable for wide band video amplifier • Complementary pair of 2SA1810 TO-126 MOD Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 200 V ————————————————————– Collector to emitter voltage VCEO 200 V ————————————————————– Emitter to base voltage VEBO 4 V ————————————————————– Collector current IC 0.
2 A ————————————————————– Collector peak current iC(peak) 0.
5 A ————————————————————– Collector power dissipation PC 1.
25 W —————— PC*1 10 ————————————————————– Junction temperature Tj 150 °C ————————————————————– Storage temperature Tstg –55 to °C +150 ————————————————————– Note: 1.
Value at TC = 25°C.
123 1.
Emitter 2.
Collector 3.
Base Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 4 ——V IE = 10 µA, IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 160 V, IE = 0 ——————————————————————————————————————————— DC current transfer ratio hFE*1 60 — 200 VCE = 5 V, IC = 10 mA ——————————————————————————————————————————— Base to emitter voltage VBE — — 1.
0 V VCE = 5 V, IC = 30 mA ——————————————————————————————————————————— ...


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