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MT4S200U

Toshiba
Part Number MT4S200U
Manufacturer Toshiba
Description SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR
Published Jun 11, 2015
Detailed Description MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Applicatio...
Datasheet PDF File MT4S200U PDF File

MT4S200U
MT4S200U

Overview
MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES • Low Noise Figure :NF=1.
7dB (@f=5.
8GHz) • High Gain:|S21e|2=9.
5dB (@f=5.
8GHz) Marking 4 3 P２ 12 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation VCBO VCEO VEBO IC IB Pc 8V 4V 1.
2 V 35 mA 5 mA 100 mW Collector Power dissipation PC(Note1) 140 mW Junction temperature Tj 150 °C Storage temperature Range Tstg −55~150 °C Note1 : Ta=25degC (When mounted on a 1.
6mm(t) glass epoxy PCB) USQ 1.
Col...


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