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C2880

Toshiba
Part Number C2880
Manufacturer Toshiba
Description 2SC2880
Published Jun 12, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications ...
Datasheet PDF File C2880 PDF File

C2880
C2880

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 200 150 5 50 10 500 800 150 −55 to 150 V V V mA mA mW °C °C PW-Mini JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.
8 t) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 200 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note 3) VCE = 5 V, IC = 10 mA VCE (sat) IC = 10 mA, IB = 1 mA VBE VCE = 5 V, IC = 30 mA fT VCE = 30 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note 3: hFE classification O: 70 to 140, Y: 120 to 240 Marking 2SC2880 Min Typ.
Max Unit ― ― 0.
1 μA ― ― 0.
1 μA 70 ― 240 ―...


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