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TGA4534-SM

TriQuint Semiconductor
Part Number TGA4534-SM
Manufacturer TriQuint Semiconductor
Description K-Band Power Amplifier
Published Jun 13, 2015
Detailed Description Applications  Point-to-Point Radio  K-band Sat-Com Product Features  Frequency Range: 17.7 – 19.7 GHz  Power: 34 dBm...
Datasheet PDF File TGA4534-SM PDF File

TGA4534-SM
TGA4534-SM

Overview
Applications  Point-to-Point Radio  K-band Sat-Com Product Features  Frequency Range: 17.
7 – 19.
7 GHz  Power: 34 dBm Psat, 33 dBm P1dB  Gain: 21 dB  TOI: 42.
5 dBm at 23 dBm/tone  Integrated Power Detector  Bias: Vd = 6 V, Idq = 1430 mA, Vg = -0.
7 V Typical  Package Dimensions: 5.
0 x 5.
0 x 1.
3 mm TGA4534-SM K-Band Power Amplifier TriQuint TGA4534SM 1201 MAL AC0753 28 lead 5x5mm QFN package Functional Block Diagram VD1 VD2 VD3 VREF 28 27 26 25 24 23 22 1 2 3 RF IN 4 5 6 7 21 20 VDET 19 18 RF OUT 17 16 15 8 9 10 11 12 13 14 VG1 VG2 VG3 General Description The TriQuint TGA4534-SM is a K-Band Power Amplifier with integrated power detector.
The TGA4534-SM operates from 17.
7 - 19.
7 GHz and is designed using TriQuint’s power pHEMT production process.
The TGA4534-SM typically provides 34 dBm of saturated output power with small signal gain of 21 dB.
Third Order Intercept is 42.
5 dBm at 23 dBm SCL.
The TGA4534-SM is available in a low-cost, surface mount 28 lead 5x5 mm QFN package and is ideally suited for Point-to-Point Radio.
Lead-free and RoHS compliant Evaluation Boards are available upon request.
Pin Configuration Pin No.
Label 1,7,8,13,14,15, 21,22,28 2,3,5,6,12,16, 17,19,20,27 4 9 10 11 18 20 23 24 25 26 GND N/C RF IN VG1 VG2 VG3 RF OUT VDET VREF VD3 VD2 VD1 Preliminary Datasheet: Rev A 01-21-14 © 2014 TriQuint Ordering Information Part No.
ECCN Description TGA4534-SM 3A001.
b.
2.
c K-Band Power Amplifier Standard T/R size = 500 pieces on a 7” reel - 1 of 15 - Disclaimer: Subject to change without notice www.
triquint.
com TGA4534-SM K-Band Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage,Vd Gate Voltage,Vg Drain to Gate Voltage, Vd – Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, T = 25 °C Channel Temperature, Tch Mounting Temperature (30 sec) Storage Temperature Rating 6.
5 V -3 to 0 V 10 V 3.
0 A -14 to +110 mA 20 W 25 dBm 200 °C 260 °C -40 to 150 °C Operation of this device outside the ...


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