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T2G4003532-FL

TriQuint Semiconductor
Part Number T2G4003532-FL
Manufacturer TriQuint Semiconductor
Description GaN RF Power Transistor
Published Jun 13, 2015
Detailed Description T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Profession...
Datasheet PDF File T2G4003532-FL PDF File

T2G4003532-FL
T2G4003532-FL

Overview
T2G4003532-FL 30W, 32V DC – 3.
5 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 3.
5 GHz • Output Power (P3dB): 28 W at 3.
5 GHz • Linear Gain: >16 dB at 3.
5 GHz • Operating Voltage: 32 V • Low thermal resistance package Functional Block Diagram General Description The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.
5 GHz.
The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant Evaluation boards are available upon request.
Pin Configuration Pin No.
1 2 Flange Label VD / RF OUT V...


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