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TGF2018

TriQuint Semiconductor
Part Number TGF2018
Manufacturer TriQuint Semiconductor
Description 180 um Discrete GaAs pHEMT
Published Jun 13, 2015
Detailed Description Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2018 ...
Datasheet PDF File TGF2018 PDF File

TGF2018
TGF2018

Overview
Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2018 180 um Discrete GaAs pHEMT Product Features  Frequency Range: DC - 20 GHz  22 dBm Typical Output Power - P1dB  14 dB Typical Gain at 12 GHz  55% Typical PAE at 12 GHz  1 dB Typical NF at 12 GHz  No Vias  Technology: 0.
25 um GaAs pHEMT  Chip Dimensions: 0.
41 x 0.
34 x 0.
10 mm Functional Block Diagram General Description The TriQuint TGF2018 is a discrete 180 micron pHEMT which operates from DC to 20 GHz.
The TGF2018 is fabricated using TriQuint’s proven standard 0.
25 um power pHEMT production process.
This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression.
This performance makes the TGF2018 appropriate for high efficiency applications.
The protective overcoat ...


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