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TGF2080

TriQuint Semiconductor
Part Number TGF2080
Manufacturer TriQuint Semiconductor
Description 800um Discrete GaAs pHEMT
Published Jun 13, 2015
Detailed Description Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2080 ...
Datasheet PDF File TGF2080 PDF File

TGF2080
TGF2080

Overview
Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2080 800um Discrete GaAs pHEMT Product Features  Frequency Range: DC - 20 GHz  29.
5 dBm Typical Output Power - P1dB  11.
5 dB Typical Gain @ 12 GHz  56% Typical PAE @ 12 GHz  No Vias  Technology: 0.
25 um GaAs pHEMT  Chip Dimensions: 0.
41 x 0.
54 x 0.
10 mm Functional Block Diagram General Description The TriQuint TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz.
The TGF2080 is designed using TriQuint’s proven standard 0.
25um power pHEMT production process.
This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2080 typically provides 29.
5 dBm of output power at P1dB with gain of 11.
5 dB and 56% poweradded efficiency at 1 dB compression.
This performance makes the TGF2080 appropriate for high efficiency applications.
The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (121um X 71um) S (121um X 96um) Terminals Gate Drain Source (outermost) Source (center) Ordering Information Part TGF2080 ECCN EAR99 Description 800um GaAs pHEMT Datasheet: Rev B 06-26-13 © 2013 TriQuint - 1 of 6- Disclaimer: Subject to change without notice www.
triquint.
com TGF2080 800um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Vds Parameter Drain-Source Voltage(2) Absolute 12 Continuous 8 Units V Vgs Gate- Source Voltage -7 -3 V Id Drain Current(2) Idss Idss mA Ig,f Forward Gate Current 40 7 mA Tch Channel Temperature(3) 175 (4) 150 (5) °C Tstg Storage Temperature -65 to 150 -65 to 150 °C Pin Input Continuous Wave Power(2) 26 @ 3 dB Compression dBm Ptot Total Power Dissipation 4.
2 2.
8 W Notes: 1.
These ratings represent the maximum operable values for this device.
Stre...


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