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JCS12N60FT

JILIN SINO-MICROELECTRONICS
Part Number JCS12N60FT
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Jun 13, 2015
Detailed Description N R N-CHANNEL MOSFET JCS12N60CT/FT MAIN CHARACTERISTICS Package ID 12 A VDSS 600 V Rdson（@Vgs=10V） 0.65Ω Qg 39nC ...
Datasheet PDF File JCS12N60FT PDF File

JCS12N60FT
JCS12N60FT

Overview
N R N-CHANNEL MOSFET JCS12N60CT/FT MAIN CHARACTERISTICS Package ID 12 A VDSS 600 V Rdson（@Vgs=10V） 0.
65Ω Qg 39nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 23pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS12N60CT-O-C-N-B JCS12N60CT JCS12N60FT-O-F-N-B JCS12N60FT Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.
15 g(typ) 2.
20 g(typ) ：200911A 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS12N60CT/FT Parameter Symbol Value JCS12N60CT JCS12N60FT － Drain-Source Voltage VDSS 600 600 Drain Current -continuous ID T=25℃ T=100℃ 12 7.
6 12* 7.
6* （ 1） Drain Current - pulse （note 1） IDM 48 48* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 880 （ 1） Avalanche Current（note 1） IAR 12 （ 1） Repetitive Avalanche Current（note 1） EAR 25 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 4.
5 Power Dissipation PD TC=25℃ -Derate above 250 2.
0 51 0.
41 25℃ Operating and Storage Temperature Range TJ，TSTG 55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：200911A 2/10 R ELECTRICAL CHARACTERISTICS JCS12N60CT/FT Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.
5 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃ - - 1 μA - - 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Character...


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