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RA80H1415M1

Mitsubishi Electric Semiconductor
Part Number RA80H1415M1
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon RF Power Modules
Published Jun 15, 2015
Detailed Description < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE ...
Datasheet PDF File RA80H1415M1 PDF File

RA80H1415M1
RA80H1415M1

Overview
< Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.
5V, 2 Stage Amp.
For MOBILE RADIO DESCRIPTION The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 144- to 148-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.
5V (typical) and 5V (maximum).
At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.
5V, VGG=0V) • Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=...


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