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FD600R17KF6CB2

eupec
Part Number FD600R17KF6CB2
Manufacturer eupec
Description IGBT
Published Jun 21, 2015
Detailed Description Technische Information / Technical Information IGBT-Module IGBT-Modules FD 600 R 17 KF6C B2 Höchstzulässige Werte / M...
Datasheet PDF File FD600R17KF6CB2 PDF File

FD600R17KF6CB2
FD600R17KF6CB2

Overview
Technische Information / Technical Information IGBT-Module IGBT-Modules FD 600 R 17 KF6C B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current TC = 80 °C TC = 25 °C Periodischer Kollektor Spitzenstrom repetitive peak collctor current tp = 1 ms, TC=80°C Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw.
current tp = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage IC = 600A, VGE = 15V, Tvj = 25°C IC = 600A, VGE = 15V, Tvj = 125°C IC = 40mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V .
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+15V Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25°C VCE = 1700V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C VCES IC,nom.
IC ICRM Ptot VGES IF IFRM I2t VISOL 1700 600 975 1200 4,8 +/- 20V 600 1200 100 4 V A A A kW V A A kA2s kV VCE sat min.
- typ.
2,6 3,1 max.
3,1 3,6 VGE(th) 4,5 5,5 6,5 V V V QG - 7,2 - µC Cies - 40 - nF Cres 2 nF ICES - 0,015 1,2 mA - 8 60 mA IGES - - 400 nA prepared by: Alfons Wiesenthal approved by: Christoph Lübke; 18.
12.
2001 date of publication: 18.
12.
2001 revision: 3 (Series) 1(8) FD600R17KF6CB2.
xls Technische Information / Te...


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