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NVB5860NL

ON Semiconductor
Part Number NVB5860NL
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jun 25, 2015
Detailed Description NTB5860NL, NTP5860NL, NVB5860NL N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • Low RDS(on) • High Current Capab...
Datasheet PDF File NVB5860NL PDF File

NVB5860NL
NVB5860NL

Overview
NTB5860NL, NTP5860NL, NVB5860NL N-Channel Power MOSFET 60 V, 220 A, 3.
0 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current, RqJC Steady State TA = 25°C TA = 100°C Power Dissipation, RqJC Steady State TA = 25°C Pulsed Drain Current tp = 10 ms Current Limited by Package Operating and Storage Temperature Range VDSS VGS ID PD IDM IDMmax TJ, Tstg 60 $20 220 156 283 660 130 −55 to +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.
3 mH) IS 130 EAS 735 Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 Unit V V A W A A °C A mJ °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 0.
53 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 28 Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.
127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012 Augsut, 2012 − Rev.
1 1 http://onsemi.
com V(BR)DSS 60 V RDS(on) MAX 3.
0 mW @ 10 V 3.
6 mW @ 4.
5 V ID MAX 220 A D G S N−CHANNEL MOSFET 4 4 12 3 12 3 TO−220AB CASE 221A STYLE 5 D2PAK CASE 418B STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain NTP 5860NLG AYWW 1 Gate 3 Source NTB 5860NLG AYWW 1 Gate 2 Drain 3 Source 2 Drain G A Y WW = Pb−Free Device =...


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