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IPD06N03LAG

Infineon
Part Number IPD06N03LAG
Manufacturer Infineon
Description Power Transistor
Published Jun 26, 2015
Detailed Description OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for tar...
Datasheet PDF File IPD06N03LAG PDF File

IPD06N03LAG
IPD06N03LAG

Overview
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary V DS R DS(on),max (SMD version) ID 25 V 5.
7 mΩ 50 A Type IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA Package Marking P-TO252-3-11 06N03LA P-TO252-3-23 06N03LA P-TO251-3-11 06N03LA P-TO251-3-1 06N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current I D,pulse T C=25 °C3) Avalanche energy, single pulse E AS I D=45 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 350 225 6 ±20 83 -55 .
.
.
175 55/175/56 Unit A mJ kV/µs V W °C Rev.
2.
0 page 1 2006-05-11 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 1.
8 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=40 µA I DSS V DS=25 V, V GS=0 V, T j=25 °C 25 1.
2 - 1.
6 0.
1 -V 2 1 µA Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V DS=25 V, V GS=0 V, T j=125 °C I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=30 A V GS=4.
5 V, I D=30 A, SMD version V GS=10 V,...


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