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IRFS4127PbF

International Rectifier
Part Number IRFS4127PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 30, 2015
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRFS4127PbF PDF File

IRFS4127PbF
IRFS4127PbF

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET D VDSS 200V :RDS(on) typ.
18.
6m max.
22m: S ID 72A DD S G D2Pak IRFS4127PbF S D G TO-262 IRFSL4127PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jkJunction-to-Case ijJunction-to-Ambient www.
irf.
com Max.
72 51 300 375 2.
5 ± 20 57 -55 to + 175 300 x x10lb in (1.
1N m) 250 See Fig.
14, 15, 22a, 22b, Typ.
––– ––– Max.
0.
4 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 09/16/08 IRFS/SL4127PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current 200 ––– ––– 3.
0 ––– ––– IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– RG(int) Internal Gate Resistance ––– Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
gfs Forward Transconductance 79 Qg Qgs Qgd Qsync td(on) ...


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