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IRFP4127PbF

International Rectifier
Part Number IRFP4127PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 30, 2015
Detailed Description Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Swit...
Datasheet PDF File IRFP4127PbF PDF File

IRFP4127PbF
IRFP4127PbF

Overview
Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits   G D S IRFP4127PbF HEXFET® Power MOSFET VDSS RDS(on) typ.
max ID 200V 17m 21m 75A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate S D G TO-247AC D Drain S Source Base part number Package Type IRFP4127PbF TO-247AC Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP4127PbF ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  Thermal Resistance   Parameter RJC Junction-to-Case  RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient  Max.
75 53 300 341 2.
3 ± 20 57 -55 to + 175   300 10 lbf·in (1.
1 N·m) Units A W W/°C V V/ns °C     244  Typ.
––– 0.
24 ––– Max.
0.
4 ––– 40 mJ Units °C/W 1 www.
irf.
com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015   IRFP4127PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance 200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
23 ––– V/°C Reference to 25°C, ID = 5mA ––– 17 21 m VGS = 10V, ID = 44A  VGS(th) Gate Threshold Voltage 3.
0 ––– 5.
0 IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS ...


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