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SSR2N60A

Fairchild Semiconductor
Part Number SSR2N60A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jul 2, 2015
Detailed Description Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacit...
Datasheet PDF File SSR2N60A PDF File

SSR2N60A
SSR2N60A

Overview
Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Lower RDS(ON) : 3.
892 Ω (Typ.
) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.
8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25 oC ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8”from case for 5-seconds 1.
Gate 2.
Drain 3.
Source Value 600 1.
8 1.
1 6 +_ 30 141 1.
8 4.
4 3.
0 2.
5 44 0.
35 - 55 to...


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