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KHB4D0N80F1

KEC
Part Number KHB4D0N80F1
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Jul 5, 2015
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet PDF File KHB4D0N80F1 PDF File

KHB4D0N80F1
KHB4D0N80F1

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.
6 @VGS = 10V Qg(typ.
)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1.
GATE 2.
DRAIN 3.
SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.
9 +_ 0.
2 15.
95 MAX 1.
3+0.
1/-0.
05 0.
8 +_ 0.
1 3.
6 +_ 0.
2 2.
8 +_ 0.
1 3.
7 0.
5+0.
1/-0.
05 1.
5 13.
08 +_ 0.
3 1.
46 1.
4 +_ 0.
1 1.
27 +_ 0.
1 2.
54 +_ 0.
2 4.
5 +_ 0.
2 2.
4 +_ 0.
2 9.
2 +_ 0.
2 MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB4D0N80F1 UNIT KHB4D0N80P1 KHB4D0N80F2 Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (No...


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