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STP3NB100

STMicroelectronics
Part Number STP3NB100
Manufacturer STMicroelectronics
Description N-CHANNEL PowerMESH MOSFET
Published Jul 5, 2015
Detailed Description STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID PRELIMIN...
Datasheet PDF File STP3NB100 PDF File

STP3NB100
STP3NB100

Overview
STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.
3Ω - 3A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID PRELIMINARY DATA STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A s TYPICAL RDS(on) = 5.
3Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 2 1 3 2 1 )DESCRIPTION t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances.
The new patent pending strip layout rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt capabilities and teunrivalled gate charge and switching characteris- tics.
oleAPPLICATIONS ss HIGH CURRENT, HIGH SPEED SWITCHING bs SWITH MODE POWER SUPPLIES (SMPS) Os DC-AC CONVERTERS FOR WELDING -EQUIPMENT t(s)ABSOLUTE MAXIMUM RATINGS cSymbol Parameter roduVDS PVDGR teVGS leID soID ObIDM (v) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP3NB100 STP3NB100FP 1000 1000 ±30 3 3 (*) 1.
9 1.
9 (*) 12 12 Unit V V V A A A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.
8 0.
28 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4.
5 4.
5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max.
Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
150 (*)Limited only by maximum temperature allowed °C August 2001 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
1/7 STP3NB100/FP THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Ther...


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