DatasheetsPDF.com

IXTA2N100

IXYS Corporation
Part Number IXTA2N100
Manufacturer IXYS Corporation
Description High Voltage MOSFET
Published Jul 9, 2015
Detailed Description High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω...
Datasheet PDF File IXTA2N100 PDF File

IXTA2N100
IXTA2N100


Overview
High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V 2A 8A 2A 150 mJ 5 V/ns 100 W - 55 .
.
.
+150 150 - 55 .
.
.
+150 300 260 1.
13 / 10 2.
5 3.
0 °C °C °C °C °C Nm/lb.
in.
g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
1000 V 2.
0 4.
5 V ±100 nA 25 μA 100 μΑ 7Ω GS TO-220 (IXTP) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z FlyBack Inverters z DC Choppers © 2009 IXYS CORPORATION, All Rights Reserved DS97540B(04/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.
5 • ID25, Note 1 CCiossss Crss VGS = 0V, VDS = 25V, f = 1MHz ttdr (on) ttdf (off) Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 20Ω (External) Qg(on) Qgs Qgd VGS= 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RthJC RthCS (TO-220) Characteristic Values Min.
Typ.
Max.
1.
5 2.
5 S 825 pF 58 pF 15 pF 20 ns 23 ns 34 ns 21 ns 18.
0 3.
7 8.
2 nC nC nC 1.
25 °C/W 0.
50 °C/W IXTA2N100 IXTP2N100 TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain Source-Drain Di...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)