DatasheetsPDF.com

IRF7805PbF

International Rectifier
Part Number IRF7805PbF
Manufacturer International Rectifier
Description HEXFET Chip-Set for DC-DC Converters
Published Jul 12, 2015
Detailed Description PD – 96031A IRF7805PbF HEXFET® Chip-Set for DC-DC Converters • N Channel Application Specific MOSFETs • Ideal for Mobi...
Datasheet PDF File IRF7805PbF PDF File

IRF7805PbF
IRF7805PbF

Overview
PD – 96031A IRF7805PbF HEXFET® Chip-Set for DC-DC Converters • N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters.
SO-8 S1 S2 S3 G4 A 8D 7D 6D 5D Top View Device Features VDS RDS(on) Qg Qsw Qoss IRF7805PbF 30V 11mΩ 31nC 11.
5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed Drain Current ePower Dissipation ePower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead egRθJA Junction-to-Ambient Max.
30 ± 12 13 10 100 2.
5 1.
6 0.
02 -55 to + 150 Units V A W W/°C °C Typ.
––– ––– Max.
20 50 Units °C/W www.
irf.
com 1 01/09/08 IRF7805PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS RDS(on) VGS(th) IDSS hParameter Drain-to-Source Breakdown Voltage hStatic Drain-to-Source On-Resistance hGate Threshold Voltage Drain-to-Source Leakage Current Min.
30 ––– 1.
0 ––– Typ.
––– 9.
2 ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA d11 mΩ VGS = 4.
5V, ID = 7.
0A 3.
0 V VDS = VGS, ID = 250µA 70 VDS = 30V, VGS = 0V ––– ––– 10 µA VDS = 24V, VGS = 0V IGSS Qg Qgs1 Qgs2 Qgd Qsw Qoss Gate-to-Source Forward Leakage hGate-to-Source Reverse Leakage Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge hSwitch Charge (Qgs2 + Qgd) hOutput Charge ––– ––– 150 VDS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)