DatasheetsPDF.com

IRF7805TRPbF-1

International Rectifier
Part Number IRF7805TRPbF-1
Manufacturer International Rectifier
Description HEXFET Chip-Set for DC-DC Converters
Published Jul 12, 2015
Detailed Description VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V 11 mΩ 22 nC 13 A IRF7805TRPbF-1 HEXFET® Chip-Set for ...
Datasheet PDF File IRF7805TRPbF-1 PDF File

IRF7805TRPbF-1
IRF7805TRPbF-1

Overview
VDS RDS(on) max (@VGS = 4.
5V) Qg (typical) ID (@TA = 25°C) 30 V 11 mΩ 22 nC 13 A IRF7805TRPbF-1 HEXFET® Chip-Set for DC-DC Converters S1 S2 S3 G4 A 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7805PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7805TRPbF-1 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage eContinuous Drain Current, VGS @ 10V eContinuous Drain Current, VGS @ 10V cPulsed Drain Current ePower Dissipation ePower Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead egRθJA Junction-to-Ambient Max.
30 ± 12 13 10 100 2.
5 1.
6 0.
02 -55 to + 150 Units V A W W/°C °C Typ.
––– ––– Max.
20 50 Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7805TRPbF-1 Static @ TJ = 25°C (unless otherwise specified) BVDSS RDS(on) VGS(th) IDSS hParameter Drain-to-Source Breakdown Voltage hStatic Drain-to-Source On-Resistance hGate Threshold Voltage Drain-to-Source Leakage Current Min.
30 ––– 1.
0 ––– Typ.
––– 9.
2 ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250μA d11 mΩ VGS = 4.
5V, ID = 7.
0A 3.
0 V VDS = VGS, ID = 250μA 70 VDS = 30V, VGS = 0V ––– ––– 10 μA VDS = 24V, VGS = 0V IGSS Qg Qgs1 Qgs2 Qgd Qsw Qoss Gate-to-Source Forward Leakage hGate-to-Source Reverse Leakage Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge hSwitch Charge (Qgs2 + Qgd) hOutput Charge ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 100°C ––– ––– ––– 100 ––– -10...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)