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IRF7807PbF-1

International Rectifier
Part Number IRF7807PbF-1
Manufacturer International Rectifier
Description HEXFET Chip-Set for DC-DC Converters
Published Jul 12, 2015
Detailed Description VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET® Chip-Set for DC-DC C...
Datasheet PDF File IRF7807PbF-1 PDF File

IRF7807PbF-1
IRF7807PbF-1

Overview
VDS RDS(on) max (@VGS = 4.
5V) Qg (typical) ID (@TA = 25°C) IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET® Chip-Set for DC-DC Converters 30 V 25 mΩ 12 nC 8.
3 A S1 S2 S3 G4 A 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7807PbF-1 IRF7807APbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 4000 Orderable Part Number IRF7807TRPbF-1 IRF7807ATRPbF-1 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.
5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current Symbol VDS VGS ID IDM PD TJ, TSTG IS ISM IRF7807 IRF7807A 30 ±12 8.
3 8.
3 6.
6 6.
6 66 66 2.
5 1.
6 –55 to 150 2.
5 2.
5 66 66 Units V A W °C A Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max.
50 Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7807/ATRPbF-1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Gate Threshold Voltage* Drain-Source Leakage Current* VGS(th) IDSS IRF7807 Min Typ Max 30 – – 17 25 1.
0 30 150 IRF7807A Min Typ Max Units 30 – – V 17 25 mΩ 1.
0 V 30 μA 150 Conditions VGS = 0V, ID = 250μA VGS = 4.
5V, ID = 7A‚ VDS = VGS, ID = 250μA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current* IGSS ±100 ±100 nA VGS = ±12V Total Gate Charge* Pre-Vth Gate-Source Charge Qg Qgs1 12 17 2.
1 12 17 2.
1 VGS = 5V, ID = 7A VDS = 16V, ID = 7A Post-Vth Gate-Source Charge Qgs2 0.
76 0.
76 nC Gate to Drain Charge Switch Charge* (Qgs2...


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