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K20J60U

Toshiba Semiconductor
Part Number K20J60U
Manufacturer Toshiba Semiconductor
Description TK20J60U
Published Jul 12, 2015
Detailed Description TK20J60Uwww.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20J60U Switching Regu...
Datasheet PDF File K20J60U PDF File

K20J60U
K20J60U


Overview
TK20J60Uwww.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20J60U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.
165 (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.
) • Low leakage current: IDSS = 100 A (VDS = 600 V) • Enhancement-mode: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current (Note 3) Repetitive avalanche energy Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 190 144 20 19 150 −55 to 150 Unit V V A W mJ A mJ °C °C 15.
9 MAX.
Unit: mm 3.
2 ± 0.
2 2.
0 1.
0 9.
0 4.
5 20.
0 ± 0.
3 3.
3 MAX.
2.
0 20.
5 ± 0.
5 2.
0 ± 0.
3 1.
0 0.
3 0.
25 5.
45 ± 0.
2 5.
45 ± 0.
2 4.
8 MAX.
1.
8 MAX.
0.
3 0.
6 0.
1 2.
8 123 1.
Gate 2.
Drain(heat sink) 3.
Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.
658 50 Unit °C/W °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch =...


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