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STPS2545CT-Y

STMicroelectronics
Part Number STPS2545CT-Y
Manufacturer STMicroelectronics
Description Automotive power Schottky rectifier
Published Jul 13, 2015
Detailed Description STPS2545CT-Y Automotive power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses...
Datasheet PDF File STPS2545CT-Y PDF File

STPS2545CT-Y
STPS2545CT-Y

Overview
STPS2545CT-Y Automotive power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified Description Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.
This device is especially intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection in automotive applications.
Datasheet − production data A1 K A2 A2 A1 K TO-220AB Table 1.
Device summary Symbol Value IF(AV) VRRM Tj (max) VF(max) 2 x 12.
5 A 45 V 175 °C 0.
57 V June 2012 This is information on a product in full production.
Doc ID 18183 Rev 2 1/7 www.
st.
com 7 Characteristics 1 Characteristics STPS2545CT-Y Table 2.
Symbol Absolute ratings (limiting values, per diode) Parameter Value Unit VRRM Repetitive peak reverse voltage 45 IF(RMS) Forward rms current 30 IF(AV) Average forward current δ = 0.
5 Tc = 160 °C Per diode 12.
5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 PARM Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 4800 Tstg Storage temperature range Tj Operating junction temperature range(1) -65 to + 175 -40 to + 175 dV/dt Critical rate of rise reverse voltage 10000 1.
dPtot dTj <1 Rth(j-a) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3.
Thermal resistances parameters V A A A W °C °C V/µs Symbol Parameter Value Unit Rth (j-c) Junction to case Rth (c) Coupling Per diode 1.
6 °C/W 0.
6 °C/W When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 4.
Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min.
Typ.
Max.
Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM Tj = 125 °C VF (1) Tj = 125 °C Forward voltage drop Tj = 25 °C IF = 12.
5 A IF = 25 A Tj = 125 °C IF = 25 A ...


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