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STW9NK95Z

STMicroelectronics
Part Number STW9NK95Z
Manufacturer STMicroelectronics
Description N-channel MOSFET
Published Jul 13, 2015
Detailed Description STW9NK95Z N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STW9NK95Z VD...
Datasheet PDF File STW9NK95Z PDF File

STW9NK95Z
STW9NK95Z

Overview
STW9NK95Z N-channel 950 V - 1.
15 Ω - 7 A - TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.
38 Ω 7 A Pw 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
3 2 1 TO-247 Figure 1.
Internal schematic diagram Table 1.
Device summary Order code STW9NK95Z Marking 9NK95Z Package TO-247 Packaging Tube July 2008 Rev 2 1/12 www.
st.
com 12 Contents Contents STW9NK95Z 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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11 2/12 STW9NK95Z 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM(1) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating Factor Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.
5 kΩ) dv/dt(2) Peak diode recovery voltage slope TJ Operating junction temperature Tstg Storage temperature 1.
Pulse width limited by safe operating area 2.
ISD ≤ 7 A, di/dt ≤ 100 A/µs,VDD ≤ 80% V(BR)DSS T...


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