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STN9260

STMicroelectronics
Part Number STN9260
Manufacturer STMicroelectronics
Description PNP power transistor
Published Jul 14, 2015
Detailed Description STN9260 High voltage fast-switching PNP power transistor Features ■ High voltage capability ■ Fast switching speed Appl...
Datasheet PDF File STN9260 PDF File

STN9260
STN9260

Overview
STN9260 High voltage fast-switching PNP power transistor Features ■ High voltage capability ■ Fast switching speed Applications ■ Lighting ■ Switch mode power supply Description This device is a high voltage fast-switching PNP power transistor.
It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
4 3 2 1 SOT-223 I Figure 1.
Internal schematic diagram Table 1.
Device summary Part number Marking STN9260 N9260 August 2011 Package SOT-223 Doc ID 18326 Rev 2 Packaging Tape and reel 1/10 www.
st.
com 10 Electrical ratings 1 Electrical ratings STN9260 Table 2.
Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Ta = 25 °C Storage temperature Max.
operating junction temperature Table 3.
Thermal data Symbol Parameter RthJA Thermal resistance junction-ambient (1) 1.
Device mounted on PCB area of 1 cm².
_max Value Unit -600 V -600 V -7 V -0.
5 A -1 A -0.
25 A -0.
5 A 1.
6 W -65 to 150 °C 150 °C Value 78 Unit °C/W 2/10 Doc ID 18326 Rev 2 STN9260 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics Symbol Parameter Test conditions Min.
Typ.
Max.
Unit ICES Collector cut-off current (VBE = 0) VCE = -600 V IEBO Emitter cut-off current (IC = 0) VEB = -7 V Collector-emitter VCE(sus) (1) sustaining voltage (IB = 0) IC = -10 mA VCE(sat) (1) Collector-emitter saturation voltage IC = -100 mA -600 IB = ...


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