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TPCT4203

Toshiba Semiconductor
Part Number TPCT4203
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCT4203 Lithium-Ion Battery Applications ...
Datasheet PDF File TPCT4203 PDF File

TPCT4203
TPCT4203

Overview
TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCT4203 Lithium-Ion Battery Applications (1Cell) z Lead(Pb)-Free z Small footprint due to a small and thin package z Low source-source ON-resistance: RSS (ON) = 25.
5 mΩ (typ.
) z High forward transfer admittance: |Yfs| = 18 S (typ.
) z Low leakage current: ISSS = 10 μA (max) (VSS = 20 V) z Enhancement mode: Vth = 0.
5 to 1.
2 V (VSS = 10 V, IS = 200 μA) z Common drain Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Source-source voltage VSSS 20 V Gate-source voltage VGSS ±12 V DC Source current Pulse (Note 1) (Note 1) IS ISP 6 A 24 Power dissipation (t = 10 s) (Note 2a, 3) PD 1.
47 W Power dissipation (t = 10 s) (Note 2b, 3) PD 0.
47 W Single-pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, 5) Channel temperature Storage temperature range EAS IAR EAR Tch Tstg 46.
8 6 0.
058 150 −55 to 150 mJ A mJ °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Unit: mm 3.
8±0.
1 1.
6 ± 0.
1 0.
375 0.
375 1 2 B 0.
14±0.
04 4 3 0.
025 M B 0.
6 ± 0.
05 S 0.
05 S 2 0.
3±0.
1 0.
4+0.
1 -0.
06 1 1.
25±0.
1 3 0.
35+0.
06 -0.
1 4 1.
93±0.
1 0.
2±0.
05 1.
GATE 1 2.
GATE 2 JEDEC 3.
SOURCE 2 4.
SOURCE 1 ― JEITA ― TOSHIBA 2-2V1A Weight: 9.
7 mg (typ.
) Circuit Configuration FET1 1 4 23 FET2 1 2008-12-27 TPCT4203 WARNING 【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pa...


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