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TPCM8001-H

Toshiba Semiconductor
Part Number TPCM8001-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Effic...
Datasheet PDF File TPCM8001-H PDF File

TPCM8001-H
TPCM8001-H

Overview
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications 0.
5±0.
1 Unit: mm 0.
8 8 0.
25±0.
05 0.
05 M A 5 4.
65±0.
3 3.
65±0.
2 • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.
0 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.
) • High forward transfer admittance: |Yfs| =36 S (typ.
) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) 0.
75±0.
05 0.
2＋－00.
2 0.
166±0.
05 14 3.
5±0.
2 0.
55 A 0.
05 S S1 4 1.
05± 0 .
2 0.
6±0.
1 2.
2±0.
2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipa...


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