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TPCA8A01-H

Toshiba Semiconductor
Part Number TPCA8A01-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-S...
Datasheet PDF File TPCA8A01-H PDF File

TPCA8A01-H
TPCA8A01-H

Overview
TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPCA8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.
5±0.
1 1.
27 0.
4±0.
1 85 Unit: mm 0.
05 M A 6.
0± 0.
3 5.
0±0.
2 • Built-in schottky barrier diode Low forward voltage: VDSF = −0.
6 V (max) • Small footprint due to a small and thin package • High speed switching • Small gate charge: Qsw =11 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) =4.
3 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 70 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 36 108 45 2.
8 1.
6 168 36 2.
1 150 −55 to 150 Unit V V V A W W W mJ A mJ °C °C 0.
15±0.
05 0.
95±0.
05 14 5.
0±0.
2 0.
595 A 0.
166±0.
05 S 0.
05 S 1 4 1.
1±0.
2 0.
6±0.
1 3.
5±0.
2 4.
25±0.
2 8 1,2,3：SOURCE 5,6,7,8：DRAIN 5 0.
8±0.
1 4：GATE JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.
080 g (typ.
) Circuit Configuration 8765 1234 Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appro...


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