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TK70A06J1

Toshiba Semiconductor
Part Number TK70A06J1
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK70A06J1 Switching Regu...
Datasheet PDF File TK70A06J1 PDF File

TK70A06J1
TK70A06J1

Overview
TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK70A06J1 Switching Regulator Application • High-Speed switching • Small gate charge: Qg = 87nC (typ.
) • Low drain-source ON resistance: RDS (ON) = 5.
1 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 80 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement-mode: Vth = 1.
1~2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche ener...


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