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TK07H90A

Toshiba Semiconductor
Part Number TK07H90A
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV) TK07H90A Switching Regulator Application...
Datasheet PDF File TK07H90A PDF File

TK07H90A
TK07H90A

Overview
TK07H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV) TK07H90A Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.
6Ω (typ.
) z High forward transfer admittance : |Yfs| =5.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 720V) z Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 900 900 ±30 7 21 150 491 7 15 150 −55~150 V V V A A W mJ A mJ °C °C 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC ― JEITA ― TOSHIBA 2-16K1A Weight: 3.
8 g (typ.
) Note: Using continuously under hea...


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