DatasheetsPDF.com

DSI45-12A

IXYS
Part Number DSI45-12A
Manufacturer IXYS
Description Standard Rectifier
Published Jul 17, 2015
Detailed Description Standard Rectifier Single Diode Part number DSI45-12A 31 DSI45-12A VRRM I FAV VF = = = 1200 V 45 A 1.23 V Backside:...
Datasheet PDF File DSI45-12A PDF File

DSI45-12A
DSI45-12A

Overview
Standard Rectifier Single Diode Part number DSI45-12A 31 DSI45-12A VRRM I FAV VF = = = 1200 V 45 A 1.
23 V Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d Rectifier Symbol VRSM VRRM IR VF I FAV Definition Conditions max.
non-repetitive reverse blocking voltage max.
repetitive reverse blocking voltage reverse current, drain current VR = 1200 V VR = 1200 V forward voltage drop IF = 45 A IF = 90 A IF = 45 A IF = 90 A average forward current TC = 130°C 180° sine VF0 rF R thJC R thCH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max.
forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz DSI45-12A TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150 °C TVJ = 175°C Ratings min.
typ.
max.
1300 1200 40 1.
5 1.
26 1.
57 1.
23 1.
66 45 Unit V V µA mA V V V V A TVJ = 175°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C 0.
25 18 0.
81 V 9.
1 mΩ 0.
55 K/W K/W 270 W 480 A 520 A 410 A 440 A 1.
15 kA²s 1.
13 kA²s 840 A²s 805 A²s pF IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved Data according to I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)