DatasheetsPDF.com

LRB521CS-30T5G

Leshan Radio Company
Part Number LRB521CS-30T5G
Manufacturer Leshan Radio Company
Description SCHOTTKY BARRIER DIODE
Published Jul 18, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplications Low current rectification zFeatures Extremelysmall sur...
Datasheet PDF File LRB521CS-30T5G PDF File

LRB521CS-30T5G
LRB521CS-30T5G

Overview
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE zApplications Low current rectification zFeatures Extremelysmall surface mounting type.
(SOD923) Low VF High reliability.
We declare that the material of product compliance with RoHS requirements.
zConstruction Silicon epitaxial planar LRB521CS-30T5G 1 2 SOD923 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LRB521CS-30T5G F 8000/Tape&Reel 1 Cathode 2 Anode zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectifierd forward current Forward current surge peak　（60Hz・1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Forward vpltage Symbol Min.
Typ.
Max.
VF - - 0.
35 VF - - 0.
4 Reverse current IR - - 10 Unit Conditions V IF=10mA V IF=20mA µA VR=10V Rev.
O 1/4 LESHAN RADIO COMPANY, LTD.
zElectrical characteristic curves FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1000 100 Ta=125℃ Ta=75℃ 10 1 0.
1 Ta=-25℃ Ta=25℃ 10000 1000 100 10 1 0.
01 0.
1 0.
001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0.
01 0 LRB521CS-30T5G CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 10 f=1MHｚ 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE:VF(mV) 300 Ta=25℃ IF=10mA 290 n=30pcs 280 270 260 AVE:270.
2mV 250 VF DISPERSION MAP REVERSE CURRENT:IR(uA) 30 Ta=25℃ 25 VR=10V n=30pcs 20 15 10 AVE:2.
017uA 5 0 IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 20 19 Ta=25℃ f=1MHz 18 VR=0V 17 n=10pcs 16 15 14 13 12 AVE:17.
34pF 11 10 Ct DISPERSION MAP 20 Ifsm 1cyc 15 8.
3ms 10 5 AVE:3.
90A 0 IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 10 Ifsm 8.
3ms 8.
3ms 1cyc 55 Ifsm t 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 1 10 TIME:t(ms) IFSM-t C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)