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BLM8205A

BELLING
Part Number BLM8205A
Manufacturer BELLING
Description N-Channel Enhancement Mode Power MOSFET
Published Jul 19, 2015
Detailed Description Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technol...
Datasheet PDF File BLM8205A PDF File

BLM8205A
BLM8205A

Overview
Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 19.
5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.
5V RDS(ON) < 27mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management TSSOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 8205A BLM8205A TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 19.
5 ±10 6 25 1.
5 -55 To 150 83 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=19.
5V,VGS=0V Min Typ Max Unit 19.
5 21 -- 1 V μA www.
belling.
com.
cn Page 1 V2.
0 Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) ...


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