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BLM3400

BELLING
Part Number BLM3400
Manufacturer BELLING
Description N-Channel Enhancement Mode Power MOSFET
Published Jul 19, 2015
Detailed Description Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology...
Datasheet PDF File BLM3400 PDF File

BLM3400
BLM3400

Overview
Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
D G GENERAL FEATURES ● VDS = 30V,ID = 5.
8A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V RDS(ON) < 41mΩ @ VGS=10V S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3400 BLM3400 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±12 5.
8 30 1.
4 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 1.
0 ℃/W Min Typ Max Unit 30 33 - V Page1 www.
belling.
com.
cn V2.
0 Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage IDSS IGSS VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note ...


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