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BLV6N60

Part Number	BLV6N60
Manufacturer	BELLING
Description	N-Channel Enhancement Mode Power MOSFET
Published	Jul 19, 2015
Detailed Description	BLV6N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requiremen...
Datasheet	BLV6N60 PDF File

Overview

BLV6N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 1.
2Ω 6A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 6 3.
8 24 125 1 490 6 12.
5 -55 to +150 -55 to +150 Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Ma...

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BLV6N60 N-Channel Enhancement Mode Power MOSFET - BELLING

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