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CPH6904

Sanyo Semicon Device
Part Number CPH6904
Manufacturer Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Published Jul 21, 2015
Detailed Description Ordering number : ENA1966 CPH6904 SANYO Semiconductors DATA SHEET CPH6904 N-Channel Silicon MOSFET High-Frequency Lo...
Datasheet PDF File CPH6904 PDF File

CPH6904
CPH6904


Overview
Ordering number : ENA1966 CPH6904 SANYO Semiconductors DATA SHEET CPH6904 N-Channel Silicon MOSFET High-Frequency Low-Noise Amplifier Applications Features • Composite type with 2 J-FET contained in a CPH6 package currently in use, improving the mounting efficiency greatly • The CPH6904 is formed with two chips, being equivalent to the CPH3910, placed in one package Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Gate Current Drain Current Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSX VGDS IG ID PD PT Tch Tstg 1unit Conditions Ratings 25 --25 10 50 400 700 150 --55 to +150 Unit V V mA mA mW mW °C °C Package Dimensions unit : mm (typ) 7018A-015 2.
9 654 0.
15 Product & Package Information • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type: TL Marking 0.
05 0.
9 2.
8 0.
2 0.
6 1.
6 0.
6 0.
2 1P LOT No.
12 0.
95 3 0.
4 1 : Drain1 2 : NC 3 : Drain2 4 : Gate2 5 : Source1/Source2 6 : Gate1 SANYO : CPH6 TL Electrical Connection 6 54 1 23 http://semicon.
sanyo.
com/en/network 11112AC TKIM TC-00002641 No.
A1966-1/4 Electrical Characteristics at Ta=25°C CPH6904 Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss NF IG=--10μA, VDS=0V VGS=--10V, VDS=0V VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=100MHz The specifications shown above are for each individual J-FET.
min --25 Ratings typ --0.
6 20.
0 30 --1.
2 40 6.
0 2.
3 2.
1 max --1.
0 --1.
8 40.
0 2.
8 Unit V nA V mA mS pF pF dB Drain Current, ID -- mA Drain Current, ID -- mA ID -- VDS 30 25 VGS=0V 20 --0.
2V 15 10 5 0 0 0.
5 1.
0 1.
5 50 Drain-to-SIoDurce--VoVltaGgeS, VDS -- V VD...



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