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MRF9045NR1

Part Number	MRF9045NR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Jul 21, 2015
Detailed Description	NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Eff...
Datasheet	MRF9045NR1 PDF File

Overview

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc • Integrated ESD Protection • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.
• 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations.
RoHS Compliant.
• TO - 270 - 2 Available in T...

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MRF9045NR1 RF Power Field Effect Transistor - Freescale Semiconductor

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