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DSF01S30SC

Toshiba Semiconductor
Part Number DSF01S30SC
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Jul 22, 2015
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm...
Datasheet PDF File DSF01S30SC PDF File

DSF01S30SC
DSF01S30SC

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC DSF01S30SC High-Speed Switching Application Unit: mm 0.
1 9±0.
02 Abusolute Maximum Ratings (Ta = 25°C) ２ 0.
025±0.
015 0.
62 ±0.
03 0.
3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 100* 2 125 −55 to 125 *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
V mA A °C °C １ 0 .
32±0.
03 0.
3±0.
03 0.
19±0.
02 0.
27±0.
02 0.
025±0.
015 １： CATHODE ２： ANODE Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
SC2 JEDEC ― JEITA ― TOSHIBA 1-1R1A Weight: 0.
17 mg (typ.
) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward voltage Reverse current Reverse current Total capacitance Symbol VF(1) VF(2) IR(1) IR(2) CT Test Circuit Test Condition ― IF = 10 mA ― IF = 100 mA ― VR = 10 V ― VR = 30 V ― VR = 0, f = 1 MHz Min Typ.
Max Unit ― 0.
27 0.
3 V ― 0.
41 0.
5 V ― ― 7 μA ― ― 50 μA ⎯ 9.
3 ⎯ pF Marking Equivalent Circuit (Top View) 1 2009-12-03 DSF01S30SC Handling Precaution Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
2 2009-12-03 FORWARD CURRENT　IF (mA) DS...


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