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DSR01S30SL

Toshiba
Part Number DSR01S30SL
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Jul 25, 2015
Detailed Description Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1. Applications • High-Speed Switching 2. Features (1) Low reverse c...
Datasheet PDF File DSR01S30SL PDF File

DSR01S30SL
DSR01S30SL

Overview
Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1.
Applications • High-Speed Switching 2.
Features (1) Low reverse current: IR = 0.
7 µA (max) @ VR = 30 V 3.
Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge current IFSM (Note 2) 2 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage a...


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