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DSR05S30U

Toshiba Semiconductor
Part Number DSR05S30U
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Jul 25, 2015
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30U DSR05S30U High Speed Switching Applications Unit: mm ...
Datasheet PDF File DSR05S30U PDF File

DSR05S30U
DSR05S30U

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30U DSR05S30U High Speed Switching Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500 ＊ 5 125 −55 to 125 V mA A °C °C *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in USC temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating...


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