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PMZB290UN

NXP Semiconductors
Part Number PMZB290UN
Manufacturer NXP Semiconductors
Description single N-channel Trench MOSFET
Published Jul 28, 2015
Detailed Description SOT883B PMZB290UN 20 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1....
Datasheet PDF File PMZB290UN PDF File

PMZB290UN
PMZB290UN

Overview
SOT883B PMZB290UN 20 V, single N-channel Trench MOSFET Rev.
1 — 11 May 2012 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Fast switching  Trench MOSFET technology  Low threshold voltage  Ultra thin package profile with 0.
37 mm height 1.
3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; ID = 200 mA; Tj = 25 °C [1] Min Typ Max Unit - - 20 V -8 - 8V - - 1A - 290 350 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided ...


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