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LBAV99LT3G

Leshan Radio Company
Part Number LBAV99LT3G
Manufacturer Leshan Radio Company
Description Dual Series Switching Diode
Published Jul 29, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode • We declare that the material of product compliance with RoHS r...
Datasheet PDF File LBAV99LT3G PDF File

LBAV99LT3G
LBAV99LT3G

Overview
LESHAN RADIO COMPANY, LTD.
Dual Series Switching Diode • We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
.
LBAV99LT1G S-LBAV99LT1G 3 1 2 SOT–23 DEVICE MARKING ORDERING INFORMATION 1 ANODE 3 CAHODE/ANODE 2 CATHODE Device Marking Shipping LBAV99LT1G S-LBAV99LT1G LBAV99LT3G S-LBAV99LT3G A7 A7 3000 Tape & Reel 10000 Tape & Reel MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.
0 µ s t = 1.
0 ms t = 1.
0 S Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FSM Value 70 215 500 70 715 450 2.
0 1.
0 0.
5 Unit Vdc mAdc mAdc V mA mA A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (1) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max 225 1.
8 556 300 2.
4 417 –65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Rev.
O 1/4 LESHAN RADIO COMPANY, LTD.
LBAV99LT1G , S-LBAV99LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100 µA) Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Diode Capacitance (V R = 0, f = 1.
0 MHz) Forward Voltage (I F = 1.
0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, i R(REC) = 1.
0 mAdc, R L = 100Ω ) (Figure 1) Forward Recovery Voltage (I F = 10 mA, t r = 20 ns) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
V (BR) IR CD VF t ...


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