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LMBD6100LT3G

Leshan Radio Company
Part Number LMBD6100LT3G
Manufacturer Leshan Radio Company
Description Monolithic Dual Switching Diode
Published Jul 29, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode FEATURE z We declare that the material of product complian...
Datasheet PDF File LMBD6100LT3G PDF File

LMBD6100LT3G
LMBD6100LT3G

Overview
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc LMBD6100LT1G S-LMBD6100LT1G 3 1 2 SOT– 23 THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θ JA T J , T stg Max 225 1.
8 556 300 2.
4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ORDERING INFORMATION DEVICE LMBD6100LT1G S-LMBD6100LT1G MARKING 5BM LMBD6100LT3G S-LMBD...


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