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FDS8984_F085

Fairchild Semiconductor
Part Number FDS8984_F085
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published Jul 30, 2015
Detailed Description FDS8984_F085 N-Channel PowerTrench® MOSFET FDS8984_F085 N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ Fabruary 2010 tm ...
Datasheet PDF File FDS8984_F085 PDF File

FDS8984_F085
FDS8984_F085

Overview
FDS8984_F085 N-Channel PowerTrench® MOSFET FDS8984_F085 N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ Fabruary 2010 tm General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
„ Max rDS(on) = 23mΩ, VGS = 10V, ID = 7A „ Max rDS(on) = 30mΩ, VGS = 4.
5V, ID = 6A „ Low gate charge „ 100% RG tested „ Qualified to AEC Q101 „ RoHS Compliant DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 5 6 Q2 7 8 Q1 4 3 2 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Parameter (Note 1a) EAS Single Pulse Avalache Energy PD Power Dissipation for Single Operation Derate above 25°C (Note 2) TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 7 30 32 1.
6 13 -55 to 150 Units V V A A mJ W mW/°C °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984_F085 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation FDS8984_F085 Rev.
A 1 www.
fairchildsemi.
com FDS8984_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V VGS = 0V TJ = 125°C VGS = ±20V,VDS = 0V 30 V 23 mV/°C 1 250 ±100 µA nA On Characteristics (Note 3) VGS(th) ∆VGS(th) ∆TJ Gate to Source Th...


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