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NTMFS4983NF

ON Semiconductor
Part Number NTMFS4983NF
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jul 31, 2015
Detailed Description NTMFS4983NF Power MOSFET 30 V, 106 A, Single N−Channel, SO−8 FL Features • Integrated Schottky Diode • Low RDS(on) to ...
Datasheet PDF File NTMFS4983NF PDF File

NTMFS4983NF
NTMFS4983NF

Overview
NTMFS4983NF Power MOSFET 30 V, 106 A, Single N−Channel, SO−8 FL Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • Synchronous Rectification for DC−DC Converters • Low Side Switching • Telecom Secondary Side Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 30 A TA = 85°C 22 Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec TA = 25°C TA = 25°C TA = 85°C PD ID 3.
13 W 48 A 34 Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C PD ID 7.
7 W 22 A 16 Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C TC = 25°C TC = 85°C PD ID 1.
7 W 106 A 76 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 38 W 320 A Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt TA = 25°C IDmaxpkg TJ, TSTG IS dV/dt 100 −55 to +150 54 6 A °C A V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 45 Apk, L = 0.
1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS TL 101 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
http://onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 2.
1 mW @ 10 V 3.
1 mW @ 4.
5 V ID MAX 106 A N−CHANNEL MOSFET D (5, 6) G (4) S (1, 2, 3) 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM D SD S 4983NF S...


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