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IXGT30N120B3D1

IXYS Corporation
Part Number IXGT30N120B3D1
Manufacturer IXYS Corporation
Description GenX3 1200V IGBTs
Published Aug 2, 2015
Detailed Description GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) t...
Datasheet PDF File IXGT30N120B3D1 PDF File

IXGT30N120B3D1
IXGT30N120B3D1

Overview
GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.
5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load TC = 25°C Mounting torque (TO-247) Maximum lead temperature for soldering 1.
6mm (0.
062 in.
) from case for 10s TO-247 TO-268 Maximum Ratings 1200 1200 V V ±20 ±30 30 28 150 ICM = 60 @ 0.
8 • VCE 300 V V A A A A W -55 .
.
.
+150 150 -55 .
.
.
+150 1.
13 / 10 300 260 6 4 °C °C °C Nm/lb.
in.
°C °C g g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless Min.
otherwise specified) Typ.
Max.
IC = 250μA, VCE = VGE VCE = VCES VGE = 0V TJ = 125°C VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C 3.
0 5.
0 V 300 μA 1.
5 mA ±100 nA 2.
96 2.
95 3.
5 V V TO-247 AD (IXGH) G CE TO-268 (IXGT) C (TAB) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2008 IXYS CORPORATION, All rights reserved DS99566A(05/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 30A, VGE = 15V, VCE = 0.
5 • VCES Qgc td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V, Notes 2 VCE = 0.
8 • VCES, RG = 5Ω td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 125°C IC = 30A,VGE = 15V, Notes 2 VCE = 0.
8 • VCES,RG = 5Ω Characteristic Values Min.
Typ.
Max.
11 19 ...


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