DatasheetsPDF.com

UPA2460T1Q

Renesas
Part Number UPA2460T1Q
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Aug 2, 2015
Detailed Description μ PA2460T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0185EJ0100 Rev.1.00 Dec 06, 2010 Description The μ...
Datasheet PDF File UPA2460T1Q PDF File

UPA2460T1Q
UPA2460T1Q

Overview
μ PA2460T1Q MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0185EJ0100 Rev.
1.
00 Dec 06, 2010 Description The μ PA2460T1Q is a switching device, which can be driven directly by a 2.
5 V power source.
The μ PA2460T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Features • 2.
5 V drive available • Low on-state resistance ⎯ RDS(on)1 = 17.
5 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
0 A) ⎯ RDS(on)2 = 18.
5 mΩ MAX.
(VGS = 4.
0 V, ID = 3.
0 A) ⎯ RDS(on)3 = 22.
0 mΩ MAX.
(VGS = 3.
1 V, ID = 3.
0 A) ⎯ RDS(on)4 = 27.
5 mΩ MAX.
(VGS = 2.
5 V, ID = 3.
0 A) • Built-in G-S protection diode against ESD Ordering Information Part No.
μ PA2460T1Q-E1-AX ∗1 LEAD PLATING Ni/Pd/Au PACKING 8 mm embossed taping Package 8-pin HUSON (2720) 3000 p/reel Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode and other parts.
) Absolute Maximum Ratings (TA = 25°C) Item Symbol N-CHANN...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)