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PMPB20XPE

NXP
Part Number PMPB20XPE
Manufacturer NXP
Description single P-channel Trench MOSFET
Published Aug 2, 2015
Detailed Description PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General des...
Datasheet PDF File PMPB20XPE PDF File

PMPB20XPE
PMPB20XPE

Overview
PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • 2.
4 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.
3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -10.
3 A Stati...


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