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FDME430NT

Fairchild Semiconductor
Part Number FDME430NT
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published Aug 2, 2015
Detailed Description FDME430NT N-Channel PowerTrench® MOSFET October 2013 FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ Feature...
Datasheet PDF File FDME430NT PDF File

FDME430NT
FDME430NT

Overview
FDME430NT N-Channel PowerTrench® MOSFET October 2013 FDME430NT N-Channel PowerTrench® MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS(on) = 40 mΩ at VGS = 4.
5 V, ID = 6 A „ Max rDS(on) = 51 mΩ at VGS = 2.
5 V, ID = 5 A „ Max rDS(on) = 71 mΩ at VGS = 1.
8 V, ID = 4 A „ Low profile: 0.
55 mm maximum in the new package MicroFET 1.
6x1.
6 Thin „ Free from halogenated compounds and antimony oxides „ RoHS Compliant This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.
8 V on special MicroFET leadframe.
Applications „ Li-lon Battery Pack „ Baseband Switch „ Load Switch „ DC-DC Conversion G D Pi...


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