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UPA2211T1M

Renesas
Part Number UPA2211T1M
Manufacturer Renesas
Description P-CHANNEL MOS FET
Published Aug 3, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2211T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2211T1M is P-cha...
Datasheet PDF File UPA2211T1M PDF File

UPA2211T1M
UPA2211T1M

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2211T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.
FEATURES • Low on-state resistance RDS(on)1 = 25 mΩ MAX.
(VGS = −4.
5 V, ID = −7.
5 A) RDS(on)2 = 34 mΩ MAX.
(VGS = −2.
5 V, ID = −3.
8 A) RDS(on)3 = 66 mΩ MAX.
(VGS = −1.
8 V, ID = −3.
8 A) • Built-in gate protection diode • −1.
8 V Gate drive available ORDERING INFORMATION PART NUMBER μ PA2211T1M-T1-AT Note μ PA2211T1M-T2-AT Note PACKING 8 mm embossed taping 3000 p/reel PACKAGE 8-pin VSOF (1629) 0.
011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and other parts.
) 0.
225±0.
1 PACKAGE DRAWING (Unit: mm) 2.
9±0.
1 0.
65 8 5 A 0.
145±0.
05 0 to 0.
025 1.
9±0.
1 1.
6±0.
1 1 0.
32±0.
05 4 0.
05 M S A 0.
8±0.
05 S 0.
05 S 1, 2, 3, 6, 7, 8: Drain 4 : Gate 5 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected...


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